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Your position:Home > News > Industry News > US researchers to enlarge the .....

US researchers to enlarge the move, or let the LED to zero light failure?

  • Source:net
  • Release on :2016-12-28
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    Researchers at the University of Illinois at Urbana-Champaign have developed a new approach to enhance the green LED brightness and improve its efficiency. Using industry-standard semiconducting long-grain technology, researchers fabricated gallium nitride (GaN) crystals on silicon substrates that produce high-power green light for solid-state lighting.

    "This is a breakthrough process," says Can Bayram, an assistant professor of electrical and computer engineering at the University of Illinois. "Researchers have succeeded in producing new materials on a tunable CMOS silicon process, namely cubic gallium nitride ), This material is mainly used for green wavelength emitter.

     Typically GaN forms one to two crystal structures, hexagonal or cubic. Hexagonal GaN is thermally stable and is a traditional semiconductor application. However, the hexagonal GaN is more prone to polarization phenomenon, the internal electric field will be negative electrons and positrons separated to prevent their combination, resulting in decreased efficiency of light output.

    Bayram and Liu believe that their square-shaped GaN crystal may be successful in getting the LED to a zero-droop. For green, blue, or UV LEDs, the luminous efficiency of these LEDs will gradually decline with the input of current, the so-called light fades.

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